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tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 1 toshiba ingaa ? p led tlre53t(f),tlrme53t(f),tlse53t(f),tloe53t(f),tlye53t(f), tlpye53t(f),tlge53t(f),tlfge53t(f),tlpge53t(f) panel circuit indicators ? 3mm package ? ingaa ? p technology ? all plastic mold ? transparent lens ? lineup: 6 colors (red, orange, yellow, pure yellow, green and pure green) ? high intensity light emission ? excellent low current light output ? applications: message boards, security devices and dashboard displays lineup unit: mm jedec D jeita D toshiba 4-4e1a weight: 0.14 g(typ.) product name color material tlre53t(f) red tlrme53t(f) red tlse53t(f) red tloe53t(f) orange tlye53t(f) yellow tlpye53t(f) pure yellow tlge53t(f) green tlfge53t(f) green tlpge53t(f) pure green pingaa l
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 2 absolute maximum ratings (ta = 25c) product name forward current i f (ma) reverse voltage v r (v) power dissipation p d (mw) operating temperature t opr (c) storage temperature t stg (c) tlre53t(f) 50 4 120 tlrme53t(f) 50 4 120 tlse53t(f) 50 4 120 tloe53t(f) 50 4 120 tlye53t(f) 50 4 120 tlpye53t(f) 50 4 120 tlge53t(f) 50 4 120 tlfge53t(f) 50 4 120 tlpge53t(f) 50 4 120 ? 40~100 ? 40~120 note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). electrical and opti cal characteristics (ta = 25c) typ. emission wavelength luminous intensity i v forward voltage v f reverse current i r product name d p ? i f min typ. i f typ. max i f max v r tlre53t (f) 630 (644) 20 20 153 400 20 1.9 2.4 20 50 4 tlrme53t (f) 626 (636) 23 20 272 600 20 1.9 2.4 20 50 4 tlse53t (f) 613 (623) 20 20 272 800 20 1.9 2.4 20 50 4 tloe53t (f) 605 (612) 20 20 272 1000 20 2.0 2.4 20 50 4 tlye53t (f) 587 (590) 17 20 272 800 20 2.0 2.4 20 50 4 tlpye53t (f) 580 (583) 14 20 153 450 20 2.0 2.4 20 50 4 tlge53t (f) 571 (574) 17 20 153 400 20 2.0 2.4 20 50 4 tlfge53t (f) 565 (568) 15 20 85 200 20 2.0 2.4 20 50 4 tlpge53t (f) 558 (562) 14 20 47.6 130 20 2.1 2.4 20 50 4 unit nm ma mcd ma v ma a v precautions please be careful of the following: ? soldering temperature: 260c max, soldering time: 3 s max (soldering portion of lead: up to 1.6 mm from the body of the device) ? if the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. soldering should be performed after lead forming. ? this visible led lamp also emits some ir light. if a photodetector is located near the led lamp, please ensure that it will not be affected by this ir light.
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 3 tlre53t(f) 1.6 50 30 10 3 1 5 100 ta = 25c 1.7 1.8 1.9 2.0 2.1 2.2 2.3 relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.00.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 700 0.8 0 0.6 1.0 0.2 0.4 i f = 20 ma ta = 25c 680 660 640 620 600 580 10 1 100 3000 1000 ta = 25c 100 10 20 ? 20 80 0.1 3 1 0.3 0.5 0 40 60 0 60 0 40 80 20 120 20 40 60 80 100
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 4 tlrme53t(f) 1.6 50 30 10 3 1 5 100 ta = 25c 1.7 1.8 1.9 2.0 2.1 2.2 2.3 relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 0 60 0 40 80 20 120 20 40 60 80 100 20 ? 20 80 0.1 3 1 0.3 0.5 0 40 60 5 10 700 0.8 0 0.6 1.0 0.2 0.4 i f = 20 ma ta = 25c 680 660 640 620 600 580 10 1 100 3000 1000 ta = 25c 100 10
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 5 tlse53t(f) 1.6 50 30 10 3 1 5 100 ta = 25c 1.7 1.8 1.9 2.0 2.1 2.2 2.3 relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 10 1 100 10000 1000 ta = 25c 100 10 0 60 0 40 80 20 120 20 40 60 80 100 680 0.8 0 0.6 1.0 0.2 0.4 i f = 20 ma ta = 25c 660 640 620 600 580 560 20 ? 20 80 0.1 3 1 0.3 0.5 0 40 60
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 6 tloe53t(f) 1.6 50 30 10 3 1 5 100 ta = 25c 1.7 1.8 1.9 2.0 2.1 2.2 2.3 relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 0 60 0 40 80 20 120 20 40 60 80 100 660 0.8 0 0.6 1.0 0.2 0.4 i f = 20 ma ta = 25c 640 620 600 580 560 540 20 ? 20 80 0.1 3 1 0.3 0.5 0 40 60 10 1 100 10000 1000 ta = 25c 100 10
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 7 tlye53t(f) 1.6 50 30 10 3 1 5 100 ta = 25c 1.7 1.8 1.9 2.0 2.1 2.2 2.3 relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 0 60 0 40 80 20 120 20 40 60 80 100 660 0.8 0 0.6 1.0 0.2 0.4 i f = 20 ma ta = 25c 640 620 600 580 560 540 20 ? 20 80 0.1 3 1 0.3 0.5 0 40 60 10 1 100 10000 1000 ta = 25c 100 10
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 8 tlpye53t(f) 2.0 1.6 2.3 50 30 10 3 1 1.7 2.1 5 100 1.8 1.9 2.2 ta = 25c relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 0 60 0 40 80 20 120 20 40 60 80 100 580 540 660 0.8 0 0.6 1.0 0.2 0.4 560 600 620 640 i f = 20 ma ta = 25c 20 ? 20 80 5 0.1 3 10 1 0.3 0.5 0 40 60 10 1 100 3000 1000 ta = 25c 100 5 10
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 9 tlge53t(f) 1.6 50 30 10 3 1 5 100 ta = 25c 1.7 1.8 1.9 2.0 2.1 2.2 2.3 relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 0 60 0 40 80 20 120 20 40 60 80 100 640 0.8 0 0.6 1.0 0.2 0.4 i f = 20 ma ta = 25c 620 600 580 560 540 520 10 1 100 5000 1000 ta = 25c 100 10 20 ? 20 80 0.1 3 1 0.3 0.5 0 40 60 5 10
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 10 tlfge53t(f) 2.0 1.6 2.3 50 30 10 3 1 1.7 2.1 5 100 1.8 1.9 2.2 ta = 25c relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 30 0 60 90 90 30 60 1.00.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 0 60 0 40 80 20 120 20 40 60 80 100 560 520 640 0.8 0 0.6 1.0 0.2 0.4 540 580 600 620 i f = 20 ma ta = 25c 20 ? 20 80 5 0.1 3 10 1 0.3 0.5 0 40 60 10 1 100 1000 100 ta = 25c 10 3
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 11 tlpge53t(f) relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta = 25c 1.6 50 30 10 3 1 5 100 ta = 25c 1.7 1.8 1.9 2.0 2.1 2.2 2.3 30 0 60 90 90 30 60 1.00.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 10 1 100 1000 100 ta = 25c 10 1 0 60 0 40 80 20 120 20 40 60 80 100 20 ? 20 80 0.1 3 1 0.3 0.5 0 40 60 5 10 640 0.8 0 0.6 1.0 0.2 0.4 i f = 20 ma ta = 25c 620 600 580 560 540 520
tl(re,rme,se,oe,ye,pye,ge,fge,pge)53t(f) 2007-10-01 12 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before creating and producing des igns and using, customers mus t also refer to and comply with (a) the latest versions of all re levant toshiba information, including without limitation, this d ocument, the specifications, the data sheets and applic ation notes for product and the precautions and conditions set forth in the ?tosh iba semiconductor reliability handbook? and (b) t he instructions for the application that product will be used with or for. custome rs are solely responsible for all aspects of t heir own product design or applications, incl uding but not limited to (a) determining th e appropriateness of the use of this product in such design or applications; (b) evaluating and det ermining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? absent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? gaas (gallium arsenide) is used in product. gaas is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose gaas in product. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or m anufacturing of nuclear, chemical , or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the japanese foreign exchange and foreign trade law and the u.s. expor t administration regulations. ex port and re-export of product or related software or technology are strictly prohibited exc ept in compliance with all applicable export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclusion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result o f noncompliance with applicable laws and regulations.

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